Abstract
AbstractWe report on spin memory relaxation time τ s of free electrons in CdTe‐based quantum wells which is found to be in the nanosecond range. In these studies two different techniques have been exploited: (i) the Hanle effect under cw excitation and (ii) the time‐resolved pump‐&‐probe Kerr rotation measured under excitation by 1.8‐ps optical pulses. These independent techniques give very close results τ s ns and τ s = 14 ns, respectively. To our knowledge this is by two orders of magnitude longer than the electron spin relaxation times reported for CdTe‐based quantum wells so far. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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