Abstract
The development of semiconductor-based nano- andsubnanosecond high current breakers is crucial for advancingmodern research in experimental physics and radioelectronics,particularly with increasing power (to 1010 W) and repetitionrate (to 104 Hz) of impulse devices. Highlighted in this revieware two types of silicon diodes: drift step recovery diodes(DSRDs) and SOS diodes with the attainable current densitiesand switched-off powers being 102 A cm−2 and 108 W in theformer case, and 105 A cm−2 and 1010 W in the latter. Thepossibility of utilizing not only monocrystalline silicon (as inDSRDs and SOS diodes) for the base material but also monocrystalline silicon carbide is examined.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
