Nanosecond Pulsed Laser Processing of Ion Implanted Single Crystal Silicon Carbide Thin Layers

Abstract

Abstract The attractiveness of single crystal SiC in a variety of high power, high voltage, and high temperature device applications such as electric vehicles and jet engines is counteracted by the very high cost of substrates. Precision cutting of multiple micrometre thick SiC layers and transferring them to lower cost substrates would drive the cost down and allow expanding the use of single crystal SiC. In this study, laser beam processing has been utilized to exfoliate thin layers from a surface of single crystal SiC that was prepared with hydrogen and boron ion implantation. The layer thickness of 1 μm has been achieved by ion implantation that formed voids and microcracks under the surface at a layer of 150 nm thick. High energy laser pulses provided the layer removal and its transfer to bonded Si substrate has been shown. Exfoliated surfaces and topography have been evaluated with Scanning Electron Microscopy. Furthermore, thermal modelling of pulse laser irradiation of implanted multi-layer SiC material has been conducted and temperature profiles are obtained at different peak pulse intensity settings to optimize exfoliation process parameters. It was found that laser exfoliation mechanism can be further improved by higher optical absorptance of defect rich layer obtained with boron ion implantation.