Abstract
AbstractMemristors are of great significance for the construction of memory devices and neuromorphological computing, which need a fast response time for ultrahigh data storage, ultrafast information processing, and efficient neuromorphic computing. Currently, memristors based on perovskite oxide materials generally have a long response time. In this paper, the electroforming‐free memristive behavior based on Ar+ irradiating induced oxygen vacancy modulation in SrTiO3 (STO) has been investigated. The Ag/STO/(Ta/Pt) device shows a stable bipolar resistive switching (RS) characteristic and can realize ultrafast multi‐resistance switching behavior. More importantly, its conductance can be continuously controlled with short pulse on the nanosecond scale to simulate potentiation and depression of synapse, promising potential application in ultra‐fast biological synapse and high‐efficiency training of neural networks. More importantly, the defect engineering strategy used in this work provides more freedom for the design and optimization of versatile memristor devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
