Abstract
In this study, a nanosecond laser was conducted to modify the Si3N4 surface to realize the bonding of Si3N4 to Al. The effects of nanosecond laser irradiation on the surface morphology and chemical compositions of Si3N4 ceramic together with the bonding of Si3N4 ceramic to Al were investigated. The laser irradiation induced the thermal decomposition of Si3N4 ceramic, resulting in the formation of a recast silicon layer upon the ceramic surface. Then bonding of Si3N4 ceramic and Al was achieved by the eutectic reaction between the recast silicon layer and Al at a bonding temperature of 600 °C under a uniaxial pressure of 10 MPa for 60 min. The nanosecond laser irradiation method proposed in this study provided a new idea to realize the direct bonding of ceramic to metal.
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