Nanoscale ZnCdS/ZnSSe heterostructures for semiconductor lasers

Abstract

We investigated cathode luminescence of ZnCdS/ZnSSe heterostructures and structures with quantum wells (QW) grown by vapor phase epitaxy from metalloorganic compounds depending on the excitation level, composition, and thickness of the ZnCdS layer. The observed dependences are explained by specific features of the energy band diagram of heterostructures with gaps in type II bands and composition nonuniformity over the ZnCdS layer thickness. A 478-nm laser with transverse optical pumping by N2-laser was realized at T = 80 K on the ZnCdS/ZnS/ZnSSe structure with QW.