Abstract
Electrical properties of nanoscale Au islands on n-type TiO2, which form a Schottky junction nanodiode, have been investigated using conductive atomic force microscopy at ultra-high vacuum. The Au islands were formed using colloidal self-assembled patterns on an n-type TiO2 semiconductor film using the Langmuir-Blodgett process. Characteristics of the nanoscale Schottky contact were determined by fitting the local current–voltage plot to the thermionic emission equation, which reveals the Schottky barrier height and the ideality factor of the Au islands on n-type TiO2, and were compared with electrical characters of the conventional macroscale diode.
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