Abstract
The modulation of carrier dynamics in a GaAs-PIN junction after photoexcitation by an ultrashort-pulse laser was probed by shaken-pulse-pair-excited scanning tunneling microscopy (SPPX-STM), which enables nanoscale mapping of time-resolved STM images. The effect of the built-in potential on the carrier dynamics, diffusion and drift, which cannot be probed by the optical pump-probe technique, was successfully visualized in real space.
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