Abstract
Arrays of nanodots and nanoholes were patterned with a highly coherent tabletop 46.9nm laser on high resolution hydrogen silsesquioxane photoresist using multiple exposure interferometric lithography. The authors observed for λ=46.9nm radiation a penetration depth in excess of 150nm. This laser-based extreme ultraviolet interferometric setup allows printing of 0.5×0.5mm2 areas with different nanoscale patterns using a compact tabletop system and exposure times of tens of seconds.
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More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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