Abstract

Metal silicide thin films are integral parts of all microelectronics devices. They have been used as ohmic contact, Schottky barrier contact, gate electrode, local interconnect and diffusion barrier. Silicides of nanoscale are named nanosilicides. As the IC industry moves into the nano era, metal silicide contacts are naturally falling into this category. In this paper, we present an overview of the recent progresses on the study of nanoscale silicides

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