Nanoscale metal–oxide–semiconductor field-effect transistors: scaling limits andopportunities

Abstract

Compact, physics-based, short-channel models of subthreshold swing and threshold voltageare presented for undoped symmetric double-gate (DG) MOSFETs, includingquantum-mechanical and fringe-induced-barrier-lowering effects. Scaling limit projectionsindicate that individual DG MOSFETs with good turn-off behaviour are feasible at 10 nmscale; however, practical exploitation of these devices toward gigascale integrated systemsrequires development of novel technologies for significant improvement in process control.