Abstract
This study proposed a method to combine near-field photolithography (NFP) with thermally induced super-resolution, and conducted simulation and analysis on nanoscale line segment fabrication. A theoretical model of optical metal film was used to calculate the transmittance of indium film during line segment fabrication. A theoretical heat transfer model was employed to analyze the exposure power density on the surface of the photoresist after laser beams penetrated the indium film. This study divided the photoresist into finite nodes. Through a simulation combining an exposure energy density formula, an exposure model, and a developmental model, we derived the theoretical width and profile of the line segment fabricated using super-resolution NFP. The widths of the derived line segments were 88 nm for photoresist with indium coating and 130 nm without. The indium film accounted for a reduction in width of 32%.
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