Abstract
An interaction layer is found at the Al/SiO2 interface in Al/AlOx/Al tunnel junctions grown on SiO2 substrates. The amorphous intermixing layer has an average thickness of about 5 nm. We present the detailed structure of this interfacial layer as determined by transmission electron microscopy. The layer contains alumina with aluminum being octahedrally coordinated according to electron energy loss spectroscopy analysis rather than tetrahedrally coordinated, where the latter coordination is the most common type in amorphous alumina. Depth profiles of the Al-O and Si-O bonding characteristics were also investigated using energy loss near edge structure.
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