Abstract
We demonstrate a high-temperature nanoscale super-Schottky diode based on a superconducting tunnel junction of pulsed-laser-deposited YBCO on GaN thin films. A buffer-free direct growth of nanoscale YBCO thin films on heavily doped GaN was performed to realize a direct high-Tc superconductor-semiconductor junction. The junction shows strongly non-linear I-V characteristics, which have practical applications as a low-voltage super-Schottky diode for microwave mixing and detection. The V-shaped differential conductance spectra observed across the junction are characteristic of the c-axis tunneling into a cuprate superconductor with a certain disorder level. This implementation of the super-Schottky diode, supported by the buffer-free direct growth of nanoscale high-Tc thin films on semiconductors, paves the way for practical large-scale fabrication and integration of high-Tc-superconductor devices in future technologies.
Highlights
We demonstrate a high-temperature nanoscale super-Schottky diode based on a superconducting tunnel junction of pulsed-laser-deposited YBCO on GaN thin films
Ranging from radio astronomy[2] and nuclear research[3] to medical imaging[4] and transportation, devices with conventional low-critical-temperature superconductors are currently being commercially employed in quantum computing circuitry[5], single-photon detection[6], ultra-sensitive magnetic flux detection[7], and for generating the universal standard for voltage[8]
Direct contact between superconductors and semiconductors opens a wide range of exciting pathways leading to enhanced photoemission from semiconductors[9], enhanced two-photon gain[10] and efficient sources of entangled photons[11] for quantum information processing, Josephson junctions[12] and many more
Summary
We demonstrate a high-temperature nanoscale super-Schottky diode based on a superconducting tunnel junction of pulsed-laser-deposited YBCO on GaN thin films. The V-shaped differential conductance spectra observed across the junction are characteristic of the c-axis tunneling into a cuprate superconductor with a certain disorder level This implementation of the super-Schottky diode, supported by the buffer-free direct growth of nanoscale high-Tc thin films on semiconductors, paves the way for practical large-scale fabrication and integration of high-Tcsuperconductor devices in future technologies. A super-Schottky diode is a superconductor-semiconductor tunnel junction with very low turn-on voltage, extraordinarily low noise performance[13] and a high degree of non-linearity, which enable high sensitivity microwave and video signal detection as well as microwave mixing[14] Implementing such devices with high-Tc superconductors with an order-of-magnitude higher operating temperature[15,16] such as YBa2Cu3O7 (YBCO)[17], could pave the way for widespread use of superconductor-based technologies. We describe the growth, processing and characterization of the YBCO/GaN devices and implement a theoretical model to extract the junction interface quality
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