Abstract
Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires have been investigated. Colloidal Au nanoparticles with ∼5nm diameters were selectively deposited onto the lithographically defined n-type Si nanowire surface by 2min electrophoresis between the channel and the side gates. The device transfer characteristics measured at room temperature showed hysteresis, with the depletion mode cutoff voltage applied by the side gates shifted by as much as 1.5V, with the source-drain bias at 1.4V. The results demonstrate that the electrostatic assembly of colloidal Au nanoparticles is a useful method for the fabrication of Si nanowire based nanoscale floating-gate nonvolatile memory structures.
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