Abstract
Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu3Ge have attracted great attention in the past decades. Despite the remarkable progress in Cu3Ge fabrication on various substrates by different deposition methods, polycrystalline films with excess Ge were frequently obtained. Moreover, the characterization of nanoscale electrical properties remains challenging. Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations. The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 ± 1 μΩ cm and ~4.47 ± 0.02 eV respectively, qualifying it as a good alternative to Cu.
Highlights
Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property
We show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations
Epitaxial Cu3Ge thin film is fabricated and its nanoscale electrical properties are characterized by conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM)
Summary
Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Despite the remarkable progress in Cu3Ge fabrication on various substrates by different deposition methods, polycrystalline films with excess Ge were frequently obtained. We show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations. The reported Cu3Ge films were frequently polycrystalline with excess Ge. Epitaxial Cu3Ge film is highly desired owing to reduced diffusion paths (grain boundaries) and possibly lower electrical resistivity. Epitaxial Cu3Ge thin film is fabricated and its nanoscale electrical properties are characterized by conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). Since the application of sapphire substrate is limited, the fabrication parameters and characterization methods reported here can be used as future reference for fabrication and characterization of epitaxial Cu3Ge films integrated on other substrates
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