Abstract
We investigate a method of inducing nano to micron scale strained regions in graphene using a laser treatment monitored by Raman spectroscopy. The Raman G-peak of the strained region shows a splitting and redshift for graphene exposed to a laser power density above a certain threshold limit (20 mW). We also note blue-shifting of the positions of both Raman D and 2D-peaks and the decrease of both their intensities relative to the G-peak with increasing laser power. These features correspond to p-type doping effects that are believed to be caused by gas adsorbates released from the substrate during the laser treatment. The induced strain is verified by AFM analysis, which shows the blister-like deformations of the treated area and the corresponding strength of the induced gauge fields in the deformed region. We find that, depending on the exact size and geometry of the blisters, the gauge fields can range between 0.4 mT and 300 T. This laser treatment procedure establishes an effective method for the local deformation and doping of graphene, which may be useful for strain engineering in device fabrication.
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