Abstract
A synthesis from micro to ultrananocrystalline boron-doped diamond (BDD/B-UNCD) requires a substrate pre-treatment by different seeding processes. Besides, for chemical vapor deposition, porous films demand high controlled two-step processes not only related to the substrate seeding but also to the suitable gas phase balancing among hydrogen, methane, boron, and argon. Firstly, systematic control of dioxide titanium nanotubes (DTNT) anodization parameters was performed including the thermally treated samples not to mention their photoelectrochemical response. Thus, high-quality porous B-UNCD was successfully obtained on DTNT substrate keeping its morphology by choosing the appropriated DTNT anodization as well as the B-UNCD growth parameters. Moreover, both B-UNCD/DTNT/Ti and DTNT were analyzed by field emission gun - scanning electron microscopy, Raman spectroscopy, X-ray diffraction, and photoelectrochemical response measurements. The results confirmed their quality and properties as well as their nanoscale control.
Published Version
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