Abstract
AbstractIn this work, grain boundary (GB) potential barrier ( Δφ GB), dopant density (Pnet), and filled trap state density (PGB,trap) were manipulated at the nanoscale by exposing the fabricated perovskite films to various relative humidity (RH) environments. Spatial mapping of surface potential in the perovskite film revealed higher positive potential at GBs than inside the grains. The average Δφ GB, Pnet, and PGB,trap in the perovskite films decreased from 0% RH to 25% RH exposure, but increased when the RH increased to 35% RH and 45% RH. This clearly indicated that perovskite solar cells fabricated at 25% RH led to the lowest average GB potential, smallest dopant density, and least filled trap states density. This is consistent with the highest photovoltaic efficiency of 18.16% at 25% RH among the different relative humidities from 0% to 45% RH.image
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
