Abstract
PbTiO3 (PTO) ferroelectric films on Pt(111) bottom electrode layers covering Ta/glass wereprepared using pulsed laser deposition. X-ray diffraction patterns revealed that thePTO films were preferentially (111)-oriented. The films were highly crystallineand had a smooth surface with root mean square (RMS) roughness of 1.5 nm.Ferroelectric properties of the PTO films were characterized using piezoresponse forcemicroscopy (PFM). PFM techniques achieved ferroelectric polarization bits with aminimum width of 22 nm, which corresponds to a potential recording density of 1.3 Tbit/in2 in ferroelectric storage devices.
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