Abstract
Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. Crystals are self-assembled reproducibly in confined spaces of 100 nm diameter with pitch down to 500 nm. The distribution of crystallite sizes across the arrays is very narrow (standard deviation of 15%) and is affected by both the hole diameter and the array pitch. The preferred growth of the crystals in the <1 1 0> orientation along the diagonal of the square holes strongly indicates that the diffusion of adatoms results in a near thermodynamic equilibrium growth mechanism of the nuclei. A clear relationship between electrical resistivity and selectivity is established across a range of metal selenides and tellurides, showing that conductive materials result in more selective growth and suggesting that electron donation is of critical importance for selective deposition.
Highlights
Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor
We recently showed the selective Chemical vapor deposition (CVD) of a range of binary chalcogenides, including Sb2Te3, using single source precursors[27,28,29,30,31]
Patterned substrates with different material combination (SiO2/TiN) and different surface preparation combination were fabricated in order to investigate the different selective deposition behavior
Summary
Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. We recently showed the selective CVD of a range of binary chalcogenides, including Sb2Te3, using single source precursors[27,28,29,30,31]. We report the deposition of individual Sb2Te3 nanocrystals from a one-step low pressure (LP) CVD method using a carefully designed single source precursor. This approach allows selective deposition of single Sb2Te3 nanocrystals into nanoscale arrays with different pitches, geometries and hole diameters. This selectivity is shown to prevail over different surface combinations. The possible mechanisms with respect to both the substrate and material properties will be discussed
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