Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Marina Baryshnikova,Bernardette Kunert,Robert Langer,Dries Van Thourhout,Han Han,Reynald Alcotte,Olivier Richard,Joris Van Campenhout,Marianna Pantouvaki,Thomas Hantschel,Yoshiyuki Ishii,Yves Mols

doi:10.3390/cryst10040330

Marina Baryshnikova, Bernardette Kunert + Show 10 more

Open Access

https://doi.org/10.3390/cryst10040330

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Journal: Crystals	Publication Date: Apr 22, 2020
Citations: 26	License type: CC BY 4.0

Affiliation: IMEC, Ghent University, KU Leuven

Abstract

Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser diodes and heterojunction bipolar transistors on 300 mm Si wafers. In this report we extend NRE to GaSb for the integration of narrow bandgap heterostructures on Si. GaSb is deposited by selective area growth in narrow oxide trenches fabricated on 300 mm Si substrates to reduce the defect density by aspect ratio trapping. The GaSb growth is continued and the NR shape on top of the oxide pattern is manipulated via NRE to achieve a broad (001) NR surface. The impact of different seed layers (GaAs and InAs) on the threading dislocation and planar defect densities in the GaSb NRs is investigated as a function of trench width by using transmission electron microscopy (TEM) as well as electron channeling contrast imaging (ECCI), which provides significantly better defect statistics in comparison to TEM only. An InAs/GaSb multi-layer heterostructure is added on top of an optimized NR structure. The high crystal quality and low defect density emphasize the potential of this monolithic integration approach for infrared optoelectronic devices on 300 mm Si substrates.

Highlights

Silicon photonics provides an integrated platform of optical components which profits from mature complementary metal oxide semiconductor (CMOS) process technology to fabricate photonic devices in high volume and with high yield
The first device demonstration of an optically pumped distributed feedback laser based on GaAs NRs waveguides emphasizes the application potential as well as compatibility of this integration concept with silicon photonics [30,47]
Each NR contains a 3× InGaAs/GaAs multi-quantum well stack capped by an InGaP layer

Summary

Introduction

Silicon photonics provides an integrated platform of optical components which profits from mature complementary metal oxide semiconductor (CMOS) process technology to fabricate photonic devices in high volume and with high yield. Another advantage is the high refractive index contrast of silicon-on-insulator (SOI) waveguides, which enables a very dense integration of photonic components [1,2]. The monolithic integration of GaSb-based heterostructures on Si substrates would lead to cost-efficient on-chip sensing applications which take advantage of the unique optoelectronic properties of III-V materials on the one hand and of the established and scalable fabrication of Crystals 2020, 10, 330; doi:10.3390/cryst10040330 www.mdpi.com/journal/crystals. The monolithic growth of InAs/GaSb type-II superlattices (T2SL) for cooled IR imager applications would open up the door to higher integration density, more advanced large-scale device fabrication and reduced substrate cost [8,9]

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