Abstract
This review presents the results of the local formation of nanostructured porous silicon (NPSi) on the surface of silicon wafers by anodic etching using a durite intermediate ring. The morphological and crystallographic features of NPSi structures formed on n- and p-type silicon with low and relatively high resistivity have also been investigated. The proposed scheme allows one to experiment with biological objects (for example, stem cells, neurons, and other objects) in a locally formed porous structure located in close proximity to the electronic periphery of sensor devices on a silicon wafer.
Highlights
The nanoscale textured porous silicon (NPSi) is gaining great interest for applications in various fields of science and technology
This review presents the results of the local formation of nanostructured porous silicon (NPSi) on the surface of silicon wafers by anodic etching using a durite intermediate ring
Depending on the etching modes and, first of all, on the resistivity of silicon wafers, NPSi is observed at different depths of the porous layer
Summary
The nanoscale textured porous silicon (NPSi) is gaining great interest for applications in various fields of science and technology. Further development of work in this direction will make it possible to integrate such a hydrogen source with its consumers on a single silicon wafer. In this regard, it is important to carry out work using the porous silicon (PSi) in the structures of micro-fuel cells based on silicon, for which hydrogen is a fuel [5]. Works on the formation of various membrane and electrode structures based on NPSi are of considerable interest [6,7]
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