Abstract
Highly porous thin films and nanostructure arrays are created by a simple process of selective dissolution of a water‐soluble material, Sr3Al2O6. Heteroepitaxial nanocomposite films with self‐separated phases of a target material and Sr3Al2O6 are first prepared by physical vapor deposition. NiO, ZnO, and Ni1− xMgxO are used as the target materials. Only the Sr3Al2O6 phase in each nanocomposite film is selectively dissolved by dipping the film in water for 30 s at room temperature. This gentle and fast method minimizes damage to the remaining target materials and side reactions that can generate impurity phases. The morphologies and dimensions of the pores and nanostructures are controlled by the relative wettability of the separated phases on the growth substrates. The supercapacitor properties of the porous NiO films are enhanced compared to plain NiO films. The method can also be used to prepare porous films or nanostructure arrays of other oxides, metals, chalcogenides, and nitrides, as well as films or nanostructures with single‐crystalline, polycrystalline, or amorphous nature.
Highlights
Porous thin films and nanostructure arrays are created by a simple such materials are useful in a variety of applications such as catalysis, sensing, process of selective dissolution of a water-soluble material, Sr3Al2O6
After the nanocomposite film is dipped into water and dried, nanostructure arrays of the target material are obtained on the substrate (Figure 1b)
Porous epitaxial films or substrate-supported nanostructure arrays were prepared by a simple procedure of dipping nanocomposite films in water for 30 s to dissolve a water-soluble phase out of nanocomposite films
Summary
ZnO nanowires with an average diameter of ≈10 nm formed after result, the SAO phase was less elongated in the lateral (in-plane) the film was dipped into water, indicating that the SAO matrix directions than the SAO phase in the film directly grown on surrounded the ZnO nanopillars before immersion, as already STO (i.e., without the NiO buffer, Figure 3a), giving rise to predicted based on the poorer wettability of ZnO on STO cf SAO smaller pore widths after selective dissolution of SAO, as shown on STO. Porous films and nanostructure arrays prepared from heteroepitaxial nanocomposite films have the potential to be integrated into state-of-the-art silicon technology because epitaxial growth of plain or nanocomposite films on silicon is already an established technique.[9]
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