Abstract
Abstract Recent advances in silicon (Si) microphotonics have enabled novel devices for the terahertz (THz) range based on dielectric waveguides. In the past couple of years, dielectric waveguides have become commonplace for THz systems to mitigate issues in efficiency, size, and cost of integration and packaging using metal-based waveguides. Therefore, THz systems have progressively evolved from cumbersome collections of discreet components to THz-wave integrated circuits. This gradual transition of THz systems from numerous components to compact integrated circuits has been facilitated at each step by incredible advances in all-Si waveguides allowing low-loss, low dispersion, and single-mode waveguiding operation. As such, all-Si waveguides position themselves as highly efficient interconnects to realize THz integrated circuits and further large-scale integration in the THz range. This review article intends to reevaluate the evolution stages of THz integrated circuits and systems based on all-Si waveguides.
Highlights
A lot of research effort has been dedicated to the terahertz (THz) range in recent years
We look into the performances of each waveguide in terms of key metric including bandwidth, loss and integrability for the realization of THz-range integrated components and systems
We have detailed recent advances made on planar all-Si platforms as “THz silicon photonics”, focusing on waveguides platforms
Summary
A lot of research effort has been dedicated to the terahertz (THz) range in recent years. By leveraging the technologies achieved in 1G and 2G, it is possible to achieve much larger-scale integration that will efficiently combine sources and detectors such as RTD and photomixers and passive components such as antenna and couplers and guiding components such as hollow waveguides and fibers Such integration will enable a wide range of applications such as wireless communications, sensing, imaging, and radars in a single compact all-Si platform that can be fabricated from a simple and costeffective etching process. This will be the third-generation (3G) of THz integrated circuits. We will discuss the challenges and the potential of the 1-THz band and related technologies
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