Abstract
AbstractThis paper reports the characteristics of gallium nitride layers that have been grown on top of an etched array of nanorods. Nanoimprint lithography has been used to create nanorods on a wafer‐scale that are subsequently passivated to allow selective regrowth from their tips by MOVPE. The first epitaxial growth step favoured lateral growth and the second resulted in a planar coalesced layer of gallium nitride. It was found that smooth planarised overgrowth required careful timing of the growth transition between the two steps and that the crystallographic quality of the overgrown layer was very sensitive to the nanorod template properties, in particular the amount of unpassivated nanorod surface. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
