Abstract
Tip‐induced local anodic oxidation on Ti, GaAs and Si films surfaces in ambient conditions is presented. Oxide patterns on smooth Ti, GaAs and Si surfaces were obtained. The thickness of the oxide layer is studied as a function of the applied probe‐sample voltage and the velocity of the tip. To reach the best resolution, the extremely flat silicon surfaces were prepared in an UHV chamber of electron microscope by using electromigration effect. The average roughness of surfaces was less than 1 angstrom. Tip‐induced direct nanoscratching on GaAs surfaces is presented. The depth of the nanocuts is studied as a function of the applied tip‐sample extra force. An example of nanofabricated oxide patterns for a nanoelectronic device is presented.
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