Abstract
The fabrication of diamond nanopatterns by electron cyclotron resonance (ECR) oxygen plasma with a composite metal octylate mask was investigated using electron beam lithography technology. A high etching selectivity of 14 was obtained with Bi4Ti3O12 octylate film as a mask under the plasma-etching conditions of microwave power of 300 W and oxygen gas flow rate of 3 sccm. The metal naphthenates and metal octylates exhibited negative exposure characteristics. The sensitivity of metal naphthenates (1.2×10−3 C cm−2) was ten times lower than that of polymethyl methacrylate (PMMA) resist, while that of octylates (8.0×10−5 C cm−2) was in good agreement with that of PMMA resist (6.0×10−5 C cm−2). The resulting minimum chemical vapor deposited (CVD) diamond line-width of 100 nm with a height of approximately 1 μm was fabricated with a Bi4Ti3O12 octylate mask.
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