Abstract
Low-defect density non-polar a-plane Ga1-yInyN layers on r-plane sapphire substrates are reported by implementing self-assembling nanopatterning in metalorganic vapor phase epitaxy. Nanopillar capping and void formation in regrowth lead to a 90% defect reduction. An ex-situ Ni layer transforms into a nanoisland etch mask to pattern GaN templates. a-Plane GaN and Ga1-yInyN layers with an InN content in the range of y = 0.04–0.11 are then regrown. Both exhibit a low density of basal-plane stacking faults of (4.6 ± 1.3) × 104 cm−1 by transmission electron microscopy analysis. Growth parameters and the template pattern are discussed by help of an X-ray rocking curve analysis. We find pattern the fill factor and V/III ratio to dominate the defect reduction. Resulting layers should enable efficient long-wavelength light-emitting and solar cell devices.
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