Abstract
Low-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.
Highlights
The development of large-area thin-film semiconductors at low temperature (≤200 °C) with stable device performance is of great interest for various applications, including flexible electronics, display-panel systems, and logic circuit devices.[1,2,3,4] the reported processing techniques for fabricating highperformance devices require a dependable vacuumNaqi et al NPG Asia Materials (2021)13:46Page 2 of 10 46 mobility of
1234567890():,; 1234567890():,; 1234567890():,; 1234567890():,; Introduction The development of large-area thin-film semiconductors at low temperature (≤200 °C) with stable device performance is of great interest for various applications, including flexible electronics, display-panel systems, and logic circuit devices.[1,2,3,4]
A promising p-type semiconductor material, namely, tellurium, has been increasingly studied in the field of electronic and optoelectronic devices based on its tunable bandgap and excellent carrier transport properties.[18,19,20,21,22]
Summary
The development of large-area thin-film semiconductors at low temperature (≤200 °C) with stable device performance is of great interest for various applications, including flexible electronics, display-panel systems, and logic circuit devices.[1,2,3,4] the reported processing techniques for fabricating highperformance devices require a dependable vacuumNaqi et al NPG Asia Materials (2021)13:46Page 2 of 10 46 mobility of 400 °C) annealing process and the crystallization of its doped metals.[12] an extensively explored p-type semiconductor material, carbon nanotubes (CNTs), exhibits high device performance and has been reported in various applications, including complementary metal-oxide-semiconductor (CMOS) architectures, storage devices, and biosensors,[13,14,15,16,17] but nanoscale processing over scalable additive fabrication remains a significant concern. A promising p-type semiconductor material, namely, tellurium, has been increasingly studied in the field of electronic and optoelectronic devices based on its tunable bandgap (an indirect bandgap of approximately 0.35 eV and a direct bandgap of approximately 1.04 eV in bulk and monolayer samples, respectively) and excellent carrier transport properties.[18,19,20,21,22] Te typically exhibits a trigonal atomic structure in which atoms form helical chains with strong bonding between neighboring atoms based on van der Waals interactions.[23,24,25,26] In previous reports, large-scale polycrystalline Te films have been prepared and studied using thermal evaporation processes.[4,27,28] The material properties of Te films are dependent on the deposition temperature and rate, making it difficult to obtain highly crystalline Te in a scalable area.[28,29] Alternatively, another approach using tellurium nanowires (TeNWs) has been widely studied, and various methods for synthesizing TeNW films, which differ significantly from bulk Te films, have been investigated.[30,31,32,33,34] Atomic chains of one-dimensional (1D) Te have been observed in curled shapes over large surface areas, which makes such surfaces very sensitive as fieldeffect transistors (FETs).[35,36,37,38,39] The stabilization of 1D nanowires has been successfully demonstrated by introducing CNT and boron nitride nanotube (BNNT)
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