Abstract
ABSTRACT Various TiO2-Ga2O3 nanomixed thin films were prepared by plasma enhanced atomic layer deposition with alternating supplies of reactant sources, Ti[N(CH3)2]4, [(CH)2GaNH2]3 and oxygen plasma. The surface morphologies of the thin films indicated that the nanomixed thin films were uniform and smooth. Ga and Ti were uniformed distributed on entire nanomixed thin film, and no carbon contaminations were detected inside the thin film. The electrical properties of Pt/film/Si structure were investigated. The first layer of the nanomixed thin films with different materials annealed at same conditions showed the different behaviors. Transmittances of the nanomixed thin films deposited on quartz substrates were also investigated, and the band gap energies were calculated by fitting the absorption edge of the transmittance spectra.
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