Abstract
Ultra-sharp, nanometric-curvature single crystal Si tips have been prepared from whiskers that were grown epitaxially on (111)-oriented Si substrates by a vapor-liquid-solid technique. Sharpening techniques were developed and used to prepare these tips. HRTEM studies have shown that the apex region of these tips is atomically sharp. A two-stage growing process has been developed to prepare STM probes with a relatively thick base and an ultra-sharp tip.
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