Abstract
Variable-energy positron lifetime spectroscopy was conducted for plasma-deposited thin films of hexamethyldisiloxane (HMDSiO), prepared from pure HMDSiO at different discharge powers and monomer pressures, and from HMDSiO/oxygen mixtures at different oxygen pressures. The lifetime of ortho-positronium ( o-Ps) in films deposited from pure HMDSiO increased with the increasing ratio ( I SiO/ I SiCH) of integrated absorbance of the Si–O–Si band to that of the Si–(CH 3) y ( y=2,3) band determined by infrared (IR) absorption spectroscopy. The increase in the o-Ps lifetime, indicative of the enlargement of nanometer-scale voids in the film, suggests that the weak interaction between Si–(CH 3) y groups and other segments may lead to flexible regions and larger voids. A film deposited from a HMDSiO/O 2 mixture had a less stable structure, and no correlation was observed between o-Ps lifetime and I SiO/ I SiCH for films deposited from HMDSiO/O 2 mixtures.
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