Abstract
We have successfully grown nanometer-scale InAs islands on GaP (001) by low-pressure organometallic vapor phase epitaxy (LP-OMVPE). Effects of substrate temperature and InAs deposition rate on the shape, size and areal density of InAs islands were investigated by ex-situ atomic force microscope (AFM) and high-energy electron diffraction (HEED). The AFM observations showed that the island size decreased with the substrate temperature while the areal density increased, indicating that migration play a role on island formation. The HEED patterns provided significant result that the island grown at high temperature (650°C) consisted of a few grains, while the island grown at low temperatures (550 and 500°C) was single crystalline.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
