Abstract
Nanometer-scale hole- and bit-modifications were successfully performed by applying the local electric field of scanning tunneling microscope (STM) to an oligosilane-Langmuir–Blodgett (LB) film composed of a tridecamethylhexasilanylacetic acid (MeSi 6AA) and a stearic acid-LB film. It has been found possible to perform these modifications on the monolayer with several tens nanometer-scale resolution by halting the probe tip and applying a higher bias voltage than used for usual STM imaging. Each modification could be selected by changing the polarity and the bias voltage applied. Examination of hole- and bit-formation conditions has suggested that the electron beam emitted from the tip under a high electric field makes the hole modification, and that chemical oxidation or reduction of the concerning molecule results in the bit modification.
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