Abstract
In this work, we present a direct growth mechanism of thin Ge-on-Si films at low temperature using RF-PECVD. Nonoindentation is used as depth sensing technique to reveal the film residual stress and threading dislocation density (TDD). The findings enabled us to grow a 700 nm Ge film directly on Si with TDD of $\sim 1.2\mathrm{x}10^{6}\text{cm}^{-2}$ . In addition, the correlation between the nanomechanical response and the structural properties of the integrated Ge films is investigated. Results show no variation in the mechanical response of the films for 150nm and 165nm penetration depths. Moreover, the hardness data obtained at different depth exabits lower values compared to bulk Ge due to the residual stress in the film. This technique is promising for testing the mechanical reliability of Ge based nano-devices.
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