Abstract
Using metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and pulse Laser deposition (PLD) techniques on GaN, Silicon, Silicon Carbide and sapphire substrates, high efficiency InGaN/GaN solar cells are reported with a particular emphasis on the work and achievements made with multi-junction tandem and Nanomaterials (Quantum well (QW), Multiple Quantum Wells (MQW), and Quantum Dots (QD)). An effective method for increasing photon absorption in ultrathin cells made for the best possible photovoltaic response is the InGaN/GaN QW system. To maximize light absorption, the quantum well and barrier thicknesses and number of wells in the MQW active region must be adjusted.
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