Abstract
Negative resist image distortion is caused by resist swelling during development and is a major problem in ultrahigh resolution electron beam lithography. This problem has been overcome through the use of ultrasonically assisted development. In addition, exposure dose latitude is increased by 50% compared to conventional dip development, due to the improvement in contrast. These advantages have been exploited in order to realize ∼6 nm wide lines in calixarene resist.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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