Nanolasers grown on silicon-based MOSFETs

Fanglu Lu,Connie Chang-Hasnain,Thai-Truong D Tran,Kar Wei Ng,Wai Son Ko,Roger Chen

doi:10.1364/oe.20.012171

Abstract

We report novel indium gallium arsenide (InGaAs) nanopillar lasers that are monolithically grown on (100)-silicon-based functional metal-oxide-semiconductor field effect transistors (MOSFETs) at low temperature (410 °C). The MOSFETs maintain their performance after the nanopillar growth, providing a direct demonstration of complementary metal-oxide-semiconudctor (CMOS) compatibility. Room-temperature operation of optically pumped lasers is also achieved. To our knowledge, this is the first time that monolithically integrated lasers and transistors have been shown to work on the same silicon chip, serving as a proof-of-concept that such integration can be extended to more complicated CMOS integrated circuits.

Highlights

Optical interconnects on silicon-based electronics offer the tantalizing prospect of costeffectively satisfying the insatiable need for higher data speeds and lower power consumption in computing [1]
We report novel indium gallium arsenide (InGaAs) nanopillar lasers that are monolithically grown on (100)-silicon-based functional metal-oxide-semiconductor field effect transistors (MOSFETs) at low temperature (410 °C)
This will open the door to a wide range of otherwise unattainable capabilities in electronic circuits, thanks to drastically reduced power consumption, weight and size

Summary

Introduction

Optical interconnects on silicon-based electronics offer the tantalizing prospect of costeffectively satisfying the insatiable need for higher data speeds and lower power consumption in computing [1]. III-V lasers monolithically grown on silicon have long been an attractive goal for on-chip light sources Mismatches of both lattice constant and thermal expansion coefficient have fundamentally restricted the monolithic integration of III-V lasers onto silicon substrates. This integration is further impeded by the high growth temperature of III-V bulk materials, which damages complementary metal-oxide-semiconudctor (CMOS) chips. Room temperature optically-pumped lasers are created using nanopillars grown both on polycrystalline and (100)-crystalline silicon, attesting to the excellent crystalline quality To our knowledge, this is the first time that monolithically integrated lasers and transistors have been shown to work on the same silicon chip. This is an important step forward for the cost-effective integration of nanopillar lasers into more complicated CMOS circuits with massive scalability

Nanopillar growth on MOSFETs

Nanopillar lasing characteristics

Conclusion