Abstract
Nanoindentation-induced phase transformation of amorphous, annealed amorphous and microcrystalline hydrogen-free silicon thin films were studied. Series of nanoindentation experiments were performed with a sharp Berkovich indenter at various unloading rates. The structural changes in indentation deformed regions were examined using Raman spectroscopy. Analyses of indentation curves and Raman spectra suggest that high pressure phases appear more easily in annealed amorphous Si thin films than in microcrystalline ones.
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