Nanoindentation creep behavior of diverse microstructures in a pre-strained interstitial high-entropy alloy by high-throughput mapping

Abstract

Time-dependent plastic deformation, also known as creep, can occur in high-melting-point materials at room temperature when subjected to submicron plastic contact (e.g., components in micro-electronic mechanical systems) due to the extremely high stress conditions. Previous investigations of creep behavior at submicron scale mainly focus on uniform microstructures, whereas recently developed high-performance structural materials usually show complex microstructural heterogeneities. Here, we demonstrate a high-throughput nanoindentation approach to unveil the creep behavior of locally diverse microstructures, via a case study on an interstitial high-entropy alloy (iHEA). The prototype iHEA specimen was firstly pre-strained by severe cold-rolling to achieve diverse microstructure features including dense dislocations, nanotwins and nanograins. Nanoindentation mapping with 144 indents is conducted to collect creep data from all types of diverse microstructures, followed by systematical calculations based on power-law analysis. Then intuitive contour maps of nanohardness (H), strain rate (ε˙) and stress exponent (n) are attained. The individual creep mechanism of each microstructure variant is evaluated by correlating local microstructure features with corresponding creep responses from these contour maps. With the increase of n value for different sample regions, the ε˙ value inversely reduces and the corresponding dominant creep mechanism gradually converts from diffusion-mediated mode to dislocation-controlled one. The presence of nanograins and nanotwins significantly hinders dislocation interactions and promotes stress-induced diffusion. This work verifies that nanoindentation creep behavior is highly correlated with local microstructure features, and the mapping approach is feasible for evaluating creep-resistance of locally diverse microstructures under extremely high-stress conditions.