Abstract
In order to obtain ultra-smooth surfaces of single-crystal silicon in ultra-precision machining, an intensive study of the deformation mechanism, mechanical properties, and the effect of oxide film under load is required. The mechanical properties of single-crystal silicon and the phase transition after nanoindentation experiments are investigated by nanoindentation and Raman spectroscopy, respectively. The results show that the pop-in event occurring in the theoretical elastic region of single-crystal silicon is caused by the stress concentration at the interface between the oxide film and the substrate. This causes the single-crystal silicon to be converted from the elastic deformation zone to the plastic deformation zone. And at this time, the elastic domain area is almost negligible, which seriously affects the machinability of single-crystal silicon for ultra-precision processing. In addition, the experimental data of single-crystal silicon under ultra-low load deviates greatly relative to the real value and fluctuates widely. However, when the nanoindentation experiment enters the fully plastic deformation zone of single-crystal silicon, the test results of its mechanical properties will be more accurate.
Highlights
Monocrystalline silicon, as an excellent semiconductor material, is widely used in optical and electronic components due to its excellent performance
It is found that pop-in events appear in the theoretical elastic domain of single-crystal silicon due to the presence of oxide films, which directly leads the single crystal silicon from the elastic deformation zone into the plastic deformation zone
Further studies have shown that high-pressure phase transition (HPPT) and its mechanical behavior during micro/nano-indentation were closely related to the maximum indentation load, loading/unloading velocity, indenter geometry and the crystal orientation of the sample
Summary
Monocrystalline silicon, as an excellent semiconductor material, is widely used in optical and electronic components due to its excellent performance. Further studies have shown that high-pressure phase transition (HPPT) and its mechanical behavior during micro/nano-indentation were closely related to the maximum indentation load, loading/unloading velocity, indenter geometry and the crystal orientation of the sample. Further research shows that the high-pressure phase transition (HPPT) and its mechanical behavior during micro/nano-indentation were closely related to the maximum indentation load, loading/unloading speed, indenter geometry, and crystal orientation of the samples[3, 5]. A nanoindentation study on single crystal silicon deposited with amorphous a-sic ceramic film on the surface was carried out, and the nano-scale elastoplastic response of the film under contact load was systematically characterized and analyzed[10]. The research on the influence of surface oxide film to the mechanical properties of single-crystal silicon is rarely mentioned. The output power is limited to less than 100 megawatts to protect the surface from burning effects
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