Nanoindentation and stress analysis of Si-based N/MEMS

Abstract

Nano/micro-electro-mechanical systems (N/MEMS) based devices are being fabricated on the silicon substrate for the semiconductor industry. Si-based structures find application in N/MEMS, sensors, memory devices, optoelectronic devices, electronic packaging, microwave absorptions, and transport. Nanoindentation being an efficient method to characterize the mechanical properties of thin films is deployed for the Si-based films and structures. Computational studies based on the load-depth response and stress analysis using Finite Element Modeling was done for further insight into the feasibility of these Si-based structures in device fabrication.