Abstract
In Jet and Flash Imprint Lithography (JFIL), ambient gas is trapped between the resist, the substrate and the mold. The volume of the trapped ambient gas is estimated about 9.7 ~ 21.5% of the resist volume. It takes time for the bubbles to disappear in the closed space. By using carbon dioxide as the atmospheric gas and applying an organic layer such as Spin on Carbon (SOC) to the top surface layer of the substrate, it is proposed by theoretical calculation that the gas disappearance time is shortened and the throughput is improved. When the thickness of the SOC layer on the substrate was 5 nm or more, it was indicated that the gas disappearance time was shorter in carbon dioxide ambient than in helium ambient.
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