Abstract
A new technique called “infrared laser-assisted nanoimprint lithography” was utilised to soften the thermoplastic polymer material mR-I 8020 during nanoimprint lithography. A laser setup and a sample holder with pressure and temperature control were designed for the imprint experiments. The polymer was spin coated onto crystalline Si <111> substrates. A prepatterned Si <111> substrate, which is transparent for the CO2 laser irradiation, was used as an imprint stamp as well. It was shown, that the thermoplastic resist mR-I 8020 could be successfully imprinted using the infrared CW CO2 laser irradiation (λ=10.6μm). The etching rate of the CO2 laser beam irradiated mR-I 8020 resist film under O2 RF (13.56MHz) plasma treatment and during O2 reactive ion beam etching was investigated as well.
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