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Abstract
Drivability-improved MOSFETs were successfully fabricated using nano-grating silicon wafers. Effective channel widths were increased by using the wafers. This required almost no additional process change for device fabrication when the grating height was less than or comparable to the conventional macroscopic wafer surface roughness. The fabricated MOSFET with 25nm grating height showed 22 % improvement in current drivability compared to the conventional device.
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