Abstract
Grain refinement of GaAs was achieved by application of severe plastic deformation through high-pressure torsion (HPT). Ultrafine-grained structures including nanograins were produced by the HPT processing under 24 GPa. An intense photoluminescence (PL) peak in the near infrared corresponding to the band gap of GaAs disappeared after the HPT processing but subsequent annealing gave rise not only to restoration of the original band-gap-related peak but also to an additional PL peak in the visible part of the spectrum on account of quantum confinement in the nanograins.
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