Abstract
A new structure to investigate the charge trapping characteristics of a DNA is proposed. The structure of the proposed device is a field effect transistor (FET) with a nanogap in the dielectric layer. With the proposed device, the charge trapping characteristics of the DNA are confirmed without any adhesion problems and electrical contact instability. The extraction of both electron and hole trapping characteristics were analyzed with an n-channel and a p-channel FET, respectively. The results showed that guanine has plenty of hole trap sites with a shallow energy level, which explains why hole hopping dominantly occurs in the guanine base.
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