Nanofabrication of quantum wires on (100) Si and SiGe by shifted-resist pattern and anisotropic wet etching

Abstract

A technique based on shifted resist pattern and anisotropic wet etching has been developed for fabrication of quantum wires on (100) silicon and silicon/germanium substrates. The Electron Beam Lithography exposure of a same pattern properly shifted is used to obtain a mask for the subsequent wet etching. This etching takes advantage on the strong rate dependency on plane orientation and allows V groove shaped thin wires formation.