Abstract
In this paper, a new process to fabricate nanosized silicon oxide apertures on a cantilever array is presented. The various semiconductor processes such as alkine etching, stress-dependent thermal oxidation, dilute HF etching and Au sputter deposition were utilized. With the dilute HF etching process, the opening of the nanosized oxide aperture could be fabricated in a controlled manner. The Au thin layer was deposited on the oxide apertures on the cantilever array so that the 160 nm apertures on a (5×1) cantilever array were successfully fabricated.
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